2SC5658RM3T5G Tech Specifications

2SC5658RM3T5G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case SOT-723
Number of Pins 3
Operating Temperature 150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 260mW
Terminal Form FLAT
Base Part Number 2SC5658
Number of Elements 1
Power Dissipation 260mW
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 215 @ 1mA 6V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 60mA
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Height 550μm
Width 850μm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Terminal Position DUAL
Frequency 180MHz
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 50V
hFE Min 120
Length 1.25mm
Radiation Hardening No
Lead Free Lead Free
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2SC5658RM3T5G Documents

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