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2SC5994-TD-E Tech Specifications

2SC5994-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.3W
Reach Compliance Code not_compliant
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 420MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 135mV
Collector Base Voltage (VCBO) 100V
hFE Min 200
Length 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form FLAT
Frequency 420MHz
Number of Elements 1
Power Dissipation 1.3W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Transition Frequency 420MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
Height 1.5mm
Width 2.5mm
Lead Free Lead Free
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