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2SC6017-TL-E Tech Specifications

2SC6017-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Reach Compliance Code not_compliant
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 200MHz
Collector Emitter Voltage (VCEO) 360mV
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 360mV @ 250mA, 5A
Collector Emitter Saturation Voltage 180mV
Collector Base Voltage (VCBO) 100V
hFE Min 200
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 11 hours ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
ECCN Code EAR99
Max Power Dissipation 950mW
Frequency 200MHz
Number of Elements 1
Power Dissipation 950mW
Transistor Type NPN
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA ICBO
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
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2SC6017-TL-E Documents

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