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2SC6096-TD-H Tech Specifications

2SC6096-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form FLAT
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 100V
Transition Frequency 300MHz
Collector Base Voltage (VCBO) 120V
hFE Min 300
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 1.3W
Reach Compliance Code not_compliant
Number of Elements 1
Case Connection COLLECTOR
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 150mV
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 100mA, 1A
Current - Collector (Ic) (Max) 2A
Collector Emitter Saturation Voltage 100mV
Emitter Base Voltage (VEBO) 6.5V
RoHS Status ROHS3 Compliant
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