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2SD1207S-AE Tech Specifications

2SD1207S-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature 150°C TJ
Published 2005
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Base Part Number 2SD1207
Element Configuration Single
Gain Bandwidth Product 150MHz
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Max Frequency 1MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Height 8.5mm
Width 4.7mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package 3-MP
Packaging Tape & Reel (TR)
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 1W
Polarity NPN
Power - Max 1W
Transistor Type NPN
Max Collector Current 2A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 2A
Collector Emitter Saturation Voltage 150mV
Frequency - Transition 150MHz
Emitter Base Voltage (VEBO) 6V
Length 6mm
RoHS Status RoHS Compliant
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2SD1207S-AE Documents

Download datasheets and manufacturer documentation for 2SD1207S-AE

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