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2SK3666-3-TB-E Tech Specifications

2SK3666-3-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / JFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 200mW
Pin Count 3
Power Dissipation 200mW
Input Capacitance (Ciss) (Max) @ Vds 4pF @ 10V
Continuous Drain Current (ID) 10mA
Drain to Source Breakdown Voltage 30V
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Resistance - RDS(On) 200Ohm
Height 1.1mm
Width 1.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Termination SMD/SMT
Terminal Finish Tin/Bismuth (Sn/Bi)
Base Part Number 2SK3666
Element Configuration Single
FET Type N-Channel
Breakdown Voltage 30V
Gate to Source Voltage (Vgs) -30V
Drain to Source Resistance 200Ohm
Voltage - Cutoff (VGS off) @ Id 180mV @ 1μA
Current Drain (Id) - Max 10mA
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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