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50C02SS-TL-E Tech Specifications

50C02SS-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case 3-SMD, Flat Lead
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Element Configuration Single
Collector Emitter Voltage (VCEO) 100mV
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Vce Saturation (Max) @ Ib, Ic 100mV @ 10mA, 100mA
Max Frequency 1MHz
Frequency - Transition 500MHz
Emitter Base Voltage (VEBO) 5V
Height 600μm
Width 800μm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
ECCN Code EAR99
Pin Count 3
Transistor Type NPN
Max Collector Current 400mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Collector Base Voltage (VCBO) 60V
hFE Min 300
Length 1.4mm
RoHS Status ROHS3 Compliant
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50C02SS-TL-E Documents

Download datasheets and manufacturer documentation for 50C02SS-TL-E

  • Datasheets

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