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BAW56M3T5G Tech Specifications

BAW56M3T5G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Rectifier Diode Array
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case SOT-723
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Max Operating Temperature 150°C
HTS Code 8541.10.00.70
Terminal Position DUAL
Base Part Number BAW56
Number of Elements 2
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 2.5μA @ 70V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Max Reverse Leakage Current 2.5μA
Output Current-Max 0.2A
Current - Average Rectified (Io) 200mA DC
Max Reverse Voltage (DC) 75V
Reverse Recovery Time 6 ns
Diode Configuration 1 Pair Common Anode
Height 550μm
Width 850μm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Min Operating Temperature -55°C
Subcategory Rectifier Diodes
Terminal Form FLAT
Pin Count 3
Element Configuration Common Anode
Diode Type Standard
Power Dissipation 640mW
Forward Current 200mA
Operating Temperature - Junction -55°C~150°C
Halogen Free Halogen Free
Forward Voltage 1.25V
Average Rectified Current 200mA
Max Repetitive Reverse Voltage (Vrrm) 75V
Recovery Time 6 ns
Length 1.25mm
Radiation Hardening No
Lead Free Lead Free
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BAW56M3T5G Documents

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