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BC369ZL1G Tech Specifications

BC369ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 23 hours ago)
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC -20V
Terminal Position BOTTOM
Current Rating -1A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 20V
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Transition Frequency 65MHz
Max Breakdown Voltage 20V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Frequency 65MHz
Base Part Number BC369
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 56MHz
Transistor Type PNP
Max Collector Current 1A
Current - Collector Cutoff (Max) 10μA ICBO
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 25V
hFE Min 50
RoHS Status RoHS Compliant
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BC369ZL1G Documents

Download datasheets and manufacturer documentation for BC369ZL1G

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