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BC556BZL1G Tech Specifications

BC556BZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC -65V
Terminal Position BOTTOM
Reach Compliance Code unknown
Frequency 280MHz
Base Part Number BC556
Qualification Status Not Qualified
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 650mV
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 280MHz
Collector Base Voltage (VCBO) -80V
hFE Min 180
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 625mW
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 280MHz
Transistor Type PNP
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage -300mV
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
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BC556BZL1G Documents

Download datasheets and manufacturer documentation for BC556BZL1G

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