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BC857BLT1G Tech Specifications

BC857BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Contact Plating Tin
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC -45V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
Height 940μm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating -100mA
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Transistor Type PNP
Max Collector Current 100mA
Current - Collector Cutoff (Max) 15nA ICBO
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -650mV
Collector Base Voltage (VCBO) 50V
hFE Min 220
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BC857BLT1G Documents

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