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BCP56-10T1G Tech Specifications

BCP56-10T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Contact Plating Tin
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature -65°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 80V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 130MHz
Base Part Number BCP56
Number of Elements 1
Power Dissipation 1.5W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 80V
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 130MHz
Max Breakdown Voltage 80V
Emitter Base Voltage (VEBO) 5V
Height 1.65mm
Width 3.7mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 4
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form GULL WING
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 130MHz
Transistor Type NPN
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 100V
hFE Min 25
Length 6.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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BCP56-10T1G Documents

Download datasheets and manufacturer documentation for BCP56-10T1G

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