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BCW65ALT1G Tech Specifications

BCW65ALT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 32V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Base Part Number BCW65
Number of Elements 1
Power Dissipation 300mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 32V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 100MHz
Max Breakdown Voltage 32V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 400ns
Length 3.04mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 225mW
Terminal Form GULL WING
Current Rating 800mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 100MHz
Transistor Type NPN
Max Collector Current 800mA
Current - Collector Cutoff (Max) 20nA
Collector Emitter Breakdown Voltage 32V
Collector Emitter Saturation Voltage 700mV
Collector Base Voltage (VCBO) 60V
hFE Min 35
Height 1.11mm
Width 2.64mm
RoHS Status ROHS3 Compliant
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BCW65ALT1G Documents

Download datasheets and manufacturer documentation for BCW65ALT1G

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