BF423ZL1G Tech Specifications

BF423ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature EUROPEAN PART NUMBER
Voltage - Rated DC -250V
Terminal Position BOTTOM
Current Rating -50mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 25mA 20V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Transition Frequency 60MHz
Max Breakdown Voltage 250V
Emitter Base Voltage (VEBO) 5V
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tape & Box (TB)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 830mW
Peak Reflow Temperature (Cel) 260
Frequency 60MHz
Base Part Number BF423
Number of Elements 1
Power Dissipation 830mW
Gain Bandwidth Product 60MHz
Transistor Type PNP
Max Collector Current 500mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 250V
hFE Min 50
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
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BF423ZL1G Documents

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