BS107ARL1G Tech Specifications

BS107ARL1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 200V
Terminal Position BOTTOM
Current Rating 250mA
Pin Count 3
Power Dissipation-Max 350mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 1mA
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Vgs (Max) ±20V
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Copper, Silver, Tin
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Packaging Cut Tape (CT)
JESD-609 Code e1
Part Status Obsolete
Number of Terminations 3
Resistance 6.4Ohm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.4 Ω @ 250mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 12 ns
Threshold Voltage 3V
Drain Current-Max (Abs) (ID) 0.25A
Nominal Vgs 3 V
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
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BS107ARL1G Documents

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