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DTC113EM3T5G Tech Specifications

Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR

Product Attribute Attribute Value
Category Discrete Semiconductors / Pre-Biased BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Pin Count 3
Polarity NPN
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Emitter Base (R2) 1 k Ω
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Package / Case SOT-723
Number of Pins 3
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 260mW
Terminal Form FLAT
Number of Elements 1
Element Configuration Single
Halogen Free Halogen Free
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Resistor - Base (R1) 1 k Ω
Radiation Hardening No
Lead Free Lead Free
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DTC113EM3T5G Documents

Download datasheets and manufacturer documentation for DTC113EM3T5G

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