ECH8654-TL-H Tech Specifications

MOSFET 2P-CH 20V 5A ECH8

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 8
Terminal Finish Tin/Bismuth (Sn/Bi)
Base Part Number ECH8654
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
Rds On (Max) @ Id, Vgs 38m Ω @ 3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 10V
Rise Time 55ns
Fall Time (Typ) 68 ns
Continuous Drain Current (ID) 5A
Drain Current-Max (Abs) (ID) 5A
DS Breakdown Voltage-Min 20V
FET Feature Logic Level Gate
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature 150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 1.5W
Pin Count 8
Element Configuration Dual
Power Dissipation 1.5W
FET Type 2 P-Channel (Dual)
Halogen Free Halogen Free
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 92 ns
Gate to Source Voltage (Vgs) 10V
Pulsed Drain Current-Max (IDM) 40A
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 900μm
Width 2.3mm
RoHS Status ROHS3 Compliant
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ECH8654-TL-H Documents

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