EMG2DXV5T1G Tech Specifications

Bipolar Transistors - Pre-Biased 50V Dual BRT NPN

Product Attribute Attribute Value
Category Discrete Semiconductors / BJT Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Package / Case SOT-553
Number of Pins 5
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Terminal Form FLAT
Current Rating 100mA
Base Part Number EMG
Qualification Status Not Qualified
Polarity NPN
Power Dissipation 230mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Resistor - Base (R1) 47k Ω
Resistor - Emitter Base (R2) 47k Ω
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 5
Terminal Finish Tin (Sn)
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 230mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 5
Number of Elements 2
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 250mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
hFE Min 80
Continuous Collector Current 100mA
RoHS Status RoHS Compliant
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EMG2DXV5T1G Documents

Download datasheets and manufacturer documentation for EMG2DXV5T1G

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EMG2DXV5T1G AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Arrays, Pre-Biased 3197
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EMG2DXV5T5G ON Semiconductor BJT Transistors Arrays

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