ESD5381MUT5G Tech Specifications

ON SEMICONDUCTOR ESD5381MUT5G ESD Protection Device, 10.5 V, X3DFN2, 2 Pins, 3 V, 300 mW

Product Attribute Attribute Value
Category Circuit Protection / TVS Diodes
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Obsolete
Number of Terminations 2
Type Zener
Applications General Purpose
Capacitance 13pF
Max Power Dissipation 300mW
Terminal Position BOTTOM
Operating Supply Voltage 3V
Working Voltage 3V
Power Line Protection No
Current - Peak Pulse (10/1000μs) 1A 8/20μs
Clamping Voltage 10.5V
Peak Pulse Current 1A
Peak Pulse Power 300mW
Test Current 1mA
Rep Pk Reverse Voltage-Max 3V
Number of Unidirectional Channels 1
Length 660μm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Package / Case 0201 (0603 Metric)
Number of Pins 2
Operating Temperature -55°C~150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE
Subcategory Transient Suppressors
Technology AVALANCHE
Pin Count 2
Number of Elements 1
Element Configuration Single
Voltage - Breakdown (Min) 6.1V
Max Reverse Leakage Current 100nA
Voltage - Reverse Standoff (Typ) 3V Max
Reverse Standoff Voltage 3V
Direction Unidirectional
Breakdown Voltage 6.1V
ESD Protection Yes
Height 280μm
Width 360μm
RoHS Status RoHS Compliant
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ESD5381MUT5G Documents

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