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FCA20N60-F109 Tech Specifications

MOSFET N-CH 600V 20A TO-3P

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish MATTE TIN
Base Part Number FCA20N60
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 62 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Tc
Rise Time 140ns
Vgs (Max) ±30V
Turn-Off Delay Time 230 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 60A
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Operating Temperature -55°C~150°C TJ
Series SuperFET™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 190MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 208W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 65 ns
Continuous Drain Current (ID) 20A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 690 mJ
RoHS Status ROHS3 Compliant
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FCA20N60-F109 Documents

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