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FCH072N60F Tech Specifications

FCH072N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-247-3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 481W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 72m Ω @ 26A, 10V
Input Capacitance (Ciss) (Max) @ Vds 8660pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 52A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 1128 mJ
Length 15.87mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series FRFET®, SuperFET® II
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 481W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 43 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 52A Tc
Rise Time 38ns
Vgs (Max) ±20V
Turn-Off Delay Time 140 ns
JEDEC-95 Code TO-247AB
Drain-source On Resistance-Max 0.072Ohm
Pulsed Drain Current-Max (IDM) 156A
Height 20.82mm
Width 4.82mm
RoHS Status ROHS3 Compliant
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FCH072N60F Documents

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