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FCH47N60-F085 Tech Specifications

MOSFET N-CH 600V 47A TO-247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101, SuperFET™
Part Status Not For New Designs
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 47A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Drain-source On Resistance-Max 0.079Ohm
Avalanche Energy Rating (Eas) 810 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Terminal Position SINGLE
Reach Compliance Code not_compliant
Base Part Number FCH47N60
Number of Elements 1
Power Dissipation-Max 417W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 79m Ω @ 47A, 10V
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 47A
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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FCH47N60-F085 Documents

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