FCPF190N60-F152 Tech Specifications

MOSFET N-CH 600V 20.2A TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.565008g
Operating Temperature -55°C~150°C TJ
Series SuperFET® II
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Number of Elements 1
Power Dissipation-Max 39W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 64 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 400 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Number of Channels 1
Element Configuration Single
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 199m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 20.2A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 60.6A
Radiation Hardening No
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