FDB035N10A Tech Specifications

FDB035N10A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 3.5MOhm
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 333W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 7295pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 214A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 558 mJ
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 333W
Turn On Delay Time 22 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 54ns
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 704A
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
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