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FDB047N10 Tech Specifications

FDB047N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.762g
Operating Temperature -55°C~175°C TJ
Published 2012
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 4.7MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 375W
Turn On Delay Time 174 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 386ns
Vgs (Max) ±20V
Turn-Off Delay Time 344 ns
Threshold Voltage 3.5V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 3.5 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 375W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 15265pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 244 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 656A
Height 4.83mm
Width 11.33mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDB047N10 Documents

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