FDB060AN08A0 Tech Specifications

MOSFET Discrete Auto N-Ch PowerTrench

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Current Rating 80A
Number of Elements 1
Element Configuration Single
Power Dissipation 255W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16A Ta 80A Tc
Rise Time 79ns
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 350 mJ
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Weight 1.31247g
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 75V
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 255W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 80A
Drain to Source Breakdown Voltage 75V
Height 4.83mm
Width 11.33mm
RoHS Status ROHS3 Compliant
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