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FDD10AN06A0-F085 Tech Specifications

MOSFET N-CH 60V 11A D-PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 42 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 135W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11A Ta
Rise Time 79ns
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 50A
Avalanche Energy Rating (Eas) 429 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 135W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.5m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 32 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
RoHS Status ROHS3 Compliant
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