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FDD1600N10ALZD Tech Specifications

BOOSTFET N CH 100V 6.8A TO252-5L

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G4
Power Dissipation-Max 14.9W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Rise Time 2ns
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 2.39mm
Width 6.22mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 4
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160m Ω @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 3.61nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 6.8A
Drain-source On Resistance-Max 0.16Ohm
Avalanche Energy Rating (Eas) 5.08 mJ
Length 6.73mm
Radiation Hardening No
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