FDD3N50NZTM Tech Specifications

Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK; UniFET™

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±25V
Turn-Off Delay Time 26 ns
Gate to Source Voltage (Vgs) 25V
Height 2.39mm
Width 6.22mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series UniFET-II™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 17 ns
Continuous Drain Current (ID) 2.5A
DS Breakdown Voltage-Min 500V
Length 6.73mm
Radiation Hardening No
Lead Free Lead Free
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FDD3N50NZTM Documents

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