FDD5353 Tech Specifications

FDD5353 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2007
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 12.3MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 11 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 11.5A Ta 50A Tc
Rise Time 6ns
Vgs (Max) ±20V
Turn-Off Delay Time 36 ns
Threshold Voltage 1.8V
Drain Current-Max (Abs) (ID) 54A
Nominal Vgs 1.8 V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 8 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.1W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12.3m Ω @ 10.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3215pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 11.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDD5353 Documents

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