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FDD5N50UTM-WS Tech Specifications

MOSFET N-CH 500V 3A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Series FRFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 2Ohm
Avalanche Energy Rating (Eas) 275 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 12 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 14 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3A Tc
Rise Time 21ns
Vgs (Max) ±30V
Turn-Off Delay Time 27 ns
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
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