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FDD6N50TM-F085 Tech Specifications

MOSFET N-CH 500V 6A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 89W
FET Type N-Channel
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6A Tc
Rise Time 55ns
Vgs (Max) ±30V
Turn-Off Delay Time 25 ns
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101
Part Status Active
Subcategory FET General Purpose Power
Base Part Number FDD6N50
Power Dissipation-Max 89W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 900m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 35 ns
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Radiation Hardening No
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FDD6N50TM-F085 Documents

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