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FDD8444L-F085 Tech Specifications

MOSFET N-CH 40V 50A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Mounting Type Surface Mount
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 153W
Turn On Delay Time 18.7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16A Ta 50A Tc
Rise Time 46ns
Vgs (Max) ±20V
Turn-Off Delay Time 42 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0065Ohm
Avalanche Energy Rating (Eas) 295 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 153W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.2m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 19.2 ns
Continuous Drain Current (ID) 16A
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 40V
Radiation Hardening No
Lead Free Lead Free
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