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FDD850N10L Tech Specifications

FDD850N10L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 75m Ω @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1465pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28.9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 15.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Length 6.73mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 15.7A Tc
Rise Time 21ns
Vgs (Max) ±20V
Turn-Off Delay Time 27 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.096Ohm
Height 2.39mm
Width 6.22mm
RoHS Status ROHS3 Compliant
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FDD850N10L Documents

Download datasheets and manufacturer documentation for FDD850N10L

  • Datasheets

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