FDD8647L Tech Specifications

FDD8647L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Resistance 13MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 3.1W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 14A Ta 42A Tc
Rise Time 3ns
Vgs (Max) ±20V
Turn-Off Delay Time 19 ns
Threshold Voltage 2V
Drain Current-Max (Abs) (ID) 52A
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 3.1W Ta 43W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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