FDFS6N548 Tech Specifications

FDFS6N548 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Weight 187mg
Operating Temperature -55°C~150°C TJ
Published 2017
JESD-609 Code e3
Part Status Active
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Power Dissipation-Max 1.6W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Forward Voltage 450mV
Turn-Off Delay Time 14 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.8 V
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 23MOhm
Subcategory FET General Purpose Power
Terminal Position DUAL
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Forward Current 2mA
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Ta
Rise Time 2ns
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 7A
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 30A
FET Feature Schottky Diode (Isolated)
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDFS6N548 Documents

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