FDMJ1028N Tech Specifications

MOSFET 2N-CH 20V 3.2A 6-MICROFET

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 6-WFDFN Exposed Pad
Supplier Device Package 6-MicroFET (2x2)
Packaging Tape & Reel (TR)
Series PowerTrench®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Max Power Dissipation 800mW
Number of Elements 2
Power Dissipation 1.4W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.2A
Drain to Source Voltage (Vdss) 20V
Gate to Source Voltage (Vgs) 12V
Input Capacitance 200pF
Drain to Source Resistance 76mOhm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2001
Part Status Obsolete
Max Operating Temperature 150°C
Voltage - Rated DC 20V
Current Rating 3.2A
Element Configuration Dual
Power - Max 800mW
Rds On (Max) @ Id, Vgs 90mOhm @ 3.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Continuous Drain Current (ID) 3.2A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Rds On Max 90 mΩ
Lead Free Lead Free
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