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FDMQ8403 Tech Specifications

FDMQ8403 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case 12-WDFN Exposed Pad
Weight 242.3mg
Operating Temperature -55°C~150°C TJ
Published 2009
JESD-609 Code e4
Part Status Active
Number of Terminations 12
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Max Power Dissipation 1.9W
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
FET Type 4 N-Channel (H-Bridge)
Rds On (Max) @ Id, Vgs 110m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 15V
Rise Time 1.2ns
Fall Time (Typ) 1.8 ns
Continuous Drain Current (ID) 3.1A
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 100V
FET Feature Standard
Length 5mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 12
Transistor Element Material SILICON
Packaging Cut Tape (CT)
Series GreenBridge™ PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position DUAL
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 1.9W
Turn On Delay Time 4.1 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Drain to Source Voltage (Vdss) 100V
Turn-Off Delay Time 7.2 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.11Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 750μm
Width 4.5mm
RoHS Status ROHS3 Compliant
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FDMQ8403 Documents

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