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FDMQ86530L Tech Specifications

FDMQ86530L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case 12-WDFN Exposed Pad
Weight 242.3mg
Manufacturer Package Identifier 511CR
Packaging Digi-Reel®
Series GreenBridge™ PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 1.9W
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
FET Type 4 N-Channel (H-Bridge)
Rds On (Max) @ Id, Vgs 17.5m Ω @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2295pF @ 30V
Rise Time 3.8ns
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0175Ohm
Pulsed Drain Current-Max (IDM) 50A
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 15 pF
Height 800μm
Width 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e4
Part Status Active
Number of Terminations 12
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal Position DUAL
Configuration COMPLEX
Power Dissipation 1.9W
Turn On Delay Time 8.8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 60V
Turn-Off Delay Time 22 ns
Threshold Voltage 1.8V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Turn On Time-Max (ton) 28ns
Length 5mm
Radiation Hardening No
Lead Free Lead Free
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