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FDP027N08B-F102 Tech Specifications

MOSFET N-CH 80V 120A TO-220-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Series PowerTrench®
Part Status Active
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 246W
FET Type N-Channel
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 66ns
Vgs (Max) ±20V
Turn-Off Delay Time 87 ns
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Weight 1.8g
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 246W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 47 ns
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 223A
Drain to Source Breakdown Voltage 80V
RoHS Status ROHS3 Compliant
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