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FDP038AN06A0 Tech Specifications

FDP038AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 310W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 17A Ta 80A Tc
Rise Time 144ns
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 625 mJ
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 3.8MOhm
Voltage - Rated DC 60V
Current Rating 80A
Power Dissipation-Max 310W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.8m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 60 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 60V
Height 9.65mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDP038AN06A0 Documents

Download datasheets and manufacturer documentation for FDP038AN06A0

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