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FDP047N08 Tech Specifications

FDP047N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 4.7MOhm
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 268W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9415pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 114 ns
Continuous Drain Current (ID) 164A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 656A
Nominal Vgs 3.5 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 268W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 100 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 164A Tc
Rise Time 147ns
Vgs (Max) ±20V
Turn-Off Delay Time 220 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 75V
Avalanche Energy Rating (Eas) 670 mJ
Height 16.51mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
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FDP047N08 Documents

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