FDP060AN08A0 Tech Specifications

FDP060AN08A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3
Weight 1.8g
Operating Temperature -55°C~175°C TJ
Published 2002
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Resistance 6MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 255W
Turn On Delay Time 19 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16A Ta 80A Tc
Rise Time 79ns
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Height 9.4mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 75V
Current Rating 80A
Power Dissipation-Max 255W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 38 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 75V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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