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FDPF085N10A Tech Specifications

FDPF085N10A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 33.3W
Turn On Delay Time 18 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 40A Tc
Rise Time 22ns
Vgs (Max) ±20V
Turn-Off Delay Time 29 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0085Ohm
Avalanche Energy Rating (Eas) 269 mJ
Length 10.36mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 33.3W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2695pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 16.07mm
Width 4.9mm
RoHS Status ROHS3 Compliant
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