FDPF770N15A Tech Specifications

FDPF770N15A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 21W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 77m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 765pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Height 16.07mm
Width 4.9mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Rise Time 8ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.077Ohm
Pulsed Drain Current-Max (IDM) 40A
Length 10.36mm
Radiation Hardening No
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