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FDPF8N50NZF Tech Specifications

MOSFET N-CH 500V 7A TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2010
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 27 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 28A
Length 10.16mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series UniFET-II™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Tc
Rise Time 34ns
Vgs (Max) ±25V
Turn-Off Delay Time 43 ns
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 500V
Height 15.87mm
Width 4.7mm
RoHS Status ROHS3 Compliant
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