FDS4141-F085 Tech Specifications

ON SEMICONDUCTOR - FDS4141-F085 - MOSFET, P-CH, -40V, -10.8A, SOIC-8

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Number of Terminations 8
Subcategory Other Transistors
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 1
Power Dissipation-Max 1.6W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 10.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2005pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain Current-Max (Abs) (ID) 10.8A
Pulsed Drain Current-Max (IDM) 36A
Avalanche Energy Rating (Eas) 229 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101, PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10.8A Ta
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.013Ohm
DS Breakdown Voltage-Min 40V
RoHS Status ROHS3 Compliant
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FDS4141-F085 Documents

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