FDS8958 Tech Specifications

FDS8958 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Max Power Dissipation 900mW
Terminal Form GULL WING
Current Rating 7A
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A 5A
Rise Time 9.7ns
Fall Time (Typ) 12.3 ns
Continuous Drain Current (ID) 5A
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 54 mJ
FET Feature Logic Level Gate
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 789pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 19.8 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 20A
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
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