FDS8960C Tech Specifications

FDS8960C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Weight 230.4mg
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
ECCN Code EAR99
Additional Feature FAST SWITCHING
Max Power Dissipation 2W
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power - Max 900mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A 5A
Rise Time 16ns
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 35V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.75mm
Width 3.9mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 24MOhm
Subcategory Other Transistors
Terminal Position DUAL
Current Rating 7A
Number of Channels 2
Power Dissipation 2W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 24m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 20 ns
Threshold Voltage 1V
Drain Current-Max (Abs) (ID) 7A
Dual Supply Voltage 35V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2 V
Length 4.9mm
Radiation Hardening No
RoHS Status RoHS Compliant
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