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FGA20N120FTDTU Tech Specifications

FGA20N120FTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mount Through Hole
Package / Case TO-3P-3, SC-65-3
Weight 6.401g
Packaging Tube
JESD-609 Code e3
Part Status Active
ECCN Code EAR99
HTS Code 8541.29.00.95
Max Power Dissipation 298W
Input Type Standard
Power - Max 298W
Turn-Off Delay Time 143 ns
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.2kV
Max Breakdown Voltage 1.2kV
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 60A
Gate-Emitter Thr Voltage-Max 7.5V
Length 15.8mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Element Configuration Single
Turn On Delay Time 30 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 447 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Gate Charge 137nC
Gate-Emitter Voltage-Max 25V
Height 18.9mm
Width 5mm
RoHS Status ROHS3 Compliant
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FGA20N120FTDTU Documents

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